Hexon Technology Pte Ltd HEXON 1GB vs MDT Technologies GmbH MDT 512M DDR2-66 512MB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

MDT Technologies GmbH MDT 512M DDR2-66 512MB

MDT Technologies GmbH MDT 512M DDR2-66 512MB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 3

测试中的平均数值
更快的写入速度，GB/s

1,843.6 1,394.3

测试中的平均数值
更高的内存带宽，mbps

6400 5300

左右 1.21% 更高的带宽

MDT Technologies GmbH MDT 512M DDR2-66 512MB

需要考虑的原因
MDT Technologies GmbH MDT 512M DDR2-66 512MB

报告一个错误

低于PassMark测试中的延时，ns

59 62

左右 -5% 更低的延时

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

MDT Technologies GmbH MDT 512M DDR2-66 512MB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

62 59
读取速度，GB/s

3,556.6 3,525.1
写入速度，GB/s

1,843.6 1,394.3
内存带宽，mbps

6400 5300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

542 361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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