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Micron Technology 16JTF25664AZ-1G4F1 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs Terabyte Co Ltd RCX2-16G3000R 8GB

总分
star star star star star
Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分
star star star star star
Terabyte Co Ltd RCX2-16G3000R 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB

差异 规格 评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB 需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
Terabyte Co Ltd RCX2-16G3000R 8GB 需要考虑的原因
Terabyte Co Ltd RCX2-16G3000R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 40
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 20
  • 读取速度，GB/s
    13.6 left arrow 19.5
  • 写入速度，GB/s
    8.3 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2035 left arrow 3483

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

Terabyte Co Ltd RCX2-16G3000R 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Terabyte Co Ltd RCX2-16G3000R 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Hypertec G2RT-4AFT00 16GB
Hypertec G2RT-4AFT00 16GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
SK Hynix HMA82GS6CJR8N-XN 16GB
SK Hynix HMA82GS6CJR8N-XN 16GB
内存RAM
Unigen Corporation U51U7200N8DD-BDH 4GB
Unigen Corporation U51U7200N8DD-BDH 4GB
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMD32GX4M4A2666C16 8GB
Corsair CMD32GX4M4A2666C16 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Essencore Limited KD44GU480-26N160T 4GB
Essencore Limited KD44GU480-26N160T 4GB
内存RAM