Micron Technology 16JTF51264AZ-1G4D1 4GB vs AMD R334G1339U2S 4GB

总分

Micron Technology 16JTF51264AZ-1G4D1 4GB

Micron Technology 16JTF51264AZ-1G4D1 4GB

总分

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

差异规格评论

差异

Micron Technology 16JTF51264AZ-1G4D1 4GB

需要考虑的原因
Micron Technology 16JTF51264AZ-1G4D1 4GB

报告一个错误

更快的读取速度，GB/s

13.8 9

测试中的平均数值
更快的写入速度，GB/s

8.4 4.8

测试中的平均数值

AMD R334G1339U2S 4GB

需要考虑的原因
AMD R334G1339U2S 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时

规格

完整的技术规格清单

Micron Technology 16JTF51264AZ-1G4D1 4GB

AMD R334G1339U2S 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 29
读取速度，GB/s

13.8 9.0
写入速度，GB/s

8.4 4.8
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2302 1726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JTF51264AZ-1G4D1 4GB

Micron Technology 16JTF51264AZ-1G4D1 4GB

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston HP24D4R7D4MAM-32 32GB

Kingston HP24D4R7D4MAM-32 32GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Crucial Technology CT8G4SFRA266.C4FE 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMWX8GF2666C16W4 8GB

Corsair CMWX8GF2666C16W4 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Samsung M378B1G73BH0-CK0 8GB

Samsung M378B1G73BH0-CK0 8GB

Samsung M393B1K70DH0-YH9 8GB

Samsung M393B1K70DH0-YH9 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB