Samsung M378B1G73BH0-CK0 8GB vs Samsung M393B1K70DH0-YH9 8GB

总分

Samsung M378B1G73BH0-CK0 8GB

Samsung M378B1G73BH0-CK0 8GB

总分

Samsung M393B1K70DH0-YH9 8GB

Samsung M393B1K70DH0-YH9 8GB

差异规格评论

差异

Samsung M378B1G73BH0-CK0 8GB

需要考虑的原因
Samsung M378B1G73BH0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 48

左右 19% 更低的延时
更快的读取速度，GB/s

13.9 10

测试中的平均数值
更快的写入速度，GB/s

9.2 6.9

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M393B1K70DH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70DH0-YH9 8GB

报告一个错误

规格

完整的技术规格清单

Samsung M378B1G73BH0-CK0 8GB

Samsung M393B1K70DH0-YH9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

39 48
读取速度，GB/s

13.9 10.0
写入速度，GB/s

9.2 6.9
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2448 2055

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMK16GX4M2Z2933C16 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CMSX16GX4M2A3000C16 8GB

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Corsair CMK16GX4M2A2800C16 8GB

Corsair CMK16GX4M2A2800C16 8GB

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Patriot Memory (PDP Systems) PSD416G24002 16GB

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