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Micron Technology 16JTF51264AZ-1G4M1 4GB
Corsair CMK8GX4M2B3000C15 4GB

Micron Technology 16JTF51264AZ-1G4M1 4GB vs Corsair CMK8GX4M2B3000C15 4GB

总分
star star star star star
Micron Technology 16JTF51264AZ-1G4M1 4GB

Micron Technology 16JTF51264AZ-1G4M1 4GB

总分
star star star star star
Corsair CMK8GX4M2B3000C15 4GB

Corsair CMK8GX4M2B3000C15 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264AZ-1G4M1 4GB 需要考虑的原因
Micron Technology 16JTF51264AZ-1G4M1 4GB
报告一个错误
Corsair CMK8GX4M2B3000C15 4GB 需要考虑的原因
Corsair CMK8GX4M2B3000C15 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 40
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264AZ-1G4M1 4GB
Corsair CMK8GX4M2B3000C15 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 30
  • 读取速度，GB/s
    14.2 left arrow 17.6
  • 写入速度，GB/s
    8.4 left arrow 13.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2142 left arrow 3077

Micron Technology 16JTF51264AZ-1G4M1 4GB RAM的比较

Samsung M378B5173DB0-CK0 4GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Corsair CMK8GX4M2B3000C15 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF51264AZ-1G4M1 4GB
Micron Technology 16JTF51264AZ-1G4M1 4GB
Corsair CMK8GX4M2B3000C15 4GB
Corsair CMK8GX4M2B3000C15 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3600C16-8GTZKW 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
G Skill Intl F4-3000C14-16GVRD 16GB
G Skill Intl F4-3000C14-16GVRD 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston KHX2666C16D4/4G 4GB
Kingston KHX2666C16D4/4G 4GB
内存RAM
Samsung M378B5673EH1-CH9 2GB
Samsung M378B5673EH1-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C15-8GTZ 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
AMD R748G2133U2S-UO 8GB
AMD R748G2133U2S-UO 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-2400C15-8GNS 8GB
内存RAM