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Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA302G08-EDJ1C 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs ASint Technology SLA302G08-EDJ1C 4GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
ASint Technology SLA302G08-EDJ1C 4GB

ASint Technology SLA302G08-EDJ1C 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 38
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    12.9 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 7.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
ASint Technology SLA302G08-EDJ1C 4GB 需要考虑的原因
ASint Technology SLA302G08-EDJ1C 4GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA302G08-EDJ1C 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 38
  • 读取速度，GB/s
    12.9 left arrow 12.6
  • 写入速度，GB/s
    9.0 left arrow 7.0
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 1827

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

ASint Technology SLA302G08-EDJ1C 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA302G08-EDJ1C 4GB
ASint Technology SLA302G08-EDJ1C 4GB
内存RAM
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内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
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Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M471A2K43EB1-CTD 16GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
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Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
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Corsair CML8GX3M2A1866C9 4GB
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内存RAM
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Kingston KCRXJ6-HYJ 16GB
内存RAM
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Kingston 9965669-008.A03G 16GB
内存RAM
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Ramos Technology EWB8GB681CA3-16IC 8GB
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Corsair CMW32GX4M2Z3600C18 16GB
内存RAM
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Kingston KHX1600C9D3/8G 8GB
Kingston 9965604-033.D00G 16GB
Kingston 9965604-033.D00G 16GB
内存RAM
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Corsair CML16GX3M2A1600C10 8GB
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Apacer Technology GD2.1140CH.001 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905625-011.A00G 8GB
Kingston 9905625-011.A00G 8GB
内存RAM