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Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA302G08-EDJ1C 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs ASint Technology SLA302G08-EDJ1C 4GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
ASint Technology SLA302G08-EDJ1C 4GB

ASint Technology SLA302G08-EDJ1C 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 38
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    12.9 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 7.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
ASint Technology SLA302G08-EDJ1C 4GB 需要考虑的原因
ASint Technology SLA302G08-EDJ1C 4GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA302G08-EDJ1C 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 38
  • 读取速度，GB/s
    12.9 left arrow 12.6
  • 写入速度，GB/s
    9.0 left arrow 7.0
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 1827

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

ASint Technology SLA302G08-EDJ1C 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA302G08-EDJ1C 4GB
ASint Technology SLA302G08-EDJ1C 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
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G Skill Intl F4-3200C16-16GFX 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Kingston XVTW4H-MIE 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Samsung M471A2K43CBCBCRC 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
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G Skill Intl F4-3200C16-8GFX 8GB
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
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Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMK8GX4M1A2400C14 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
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Avant Technology J642GU42J5213N1 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C15-8GTZKY 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM
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Crucial Technology CT25664AA800.M16FM 2GB
Essencore Limited KD48GU880-26N160T 8GB
Essencore Limited KD48GU880-26N160T 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Crucial Technology BL8G36C16U4R.M8FE1 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M393A1K43BB0-CRC 8GB
内存RAM