Micron Technology 16JTF51264HZ-1G6M1 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 28

左右 -33% 更低的延时
更快的读取速度，GB/s

18.6 12.9

测试中的平均数值
更快的写入速度，GB/s

14.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 21
读取速度，GB/s

12.9 18.6
写入速度，GB/s

9.0 14.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 3356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Samsung M378B2873FHS-CH9 1GB

Samsung M378B2873FHS-CH9 1GB

Kingston 99U5471-012.A00 4GB

Kingston 99U5471-012.A00 4GB

Corsair CM4X8GD3000C15K4 8GB

Corsair CM4X8GD3000C15K4 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Apacer Technology 78.BAGNF.40C0B 4GB

Apacer Technology 78.BAGNF.40C0B 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB