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Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BL16G32C16U4R.16FE 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BL16G32C16U4R.16FE 16GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Crucial Technology BL16G32C16U4R.16FE 16GB

Crucial Technology BL16G32C16U4R.16FE 16GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
Crucial Technology BL16G32C16U4R.16FE 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4R.16FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    22 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BL16G32C16U4R.16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    12.9 left arrow 22.0
  • 写入速度，GB/s
    9.0 left arrow 16.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3830

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Crucial Technology BL16G32C16U4R.16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kllisre 99P54280002.A00LF 8GB
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内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Crucial Technology BL16G32C16U4R.16FE 16GB
Crucial Technology BL16G32C16U4R.16FE 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
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UMAX Technology 16GB
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Elpida EBJ10UE8BAFA-AE-E 1GB
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Crucial Technology BL8G26C16U4B.8FE 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
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内存RAM
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Samsung M3 78T2953EZ3-CF7 1GB
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G Skill Intl F4-2133C15-8GFT 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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Crucial Technology CT16G4SFD824A.C16FE 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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Avant Technology J641GU42J9266NL 8GB
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