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Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BL8G32C16U4WL.8FE 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BL8G32C16U4WL.8FE 8GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
Crucial Technology BL8G32C16U4WL.8FE 8GB 需要考虑的原因
Crucial Technology BL8G32C16U4WL.8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 25
  • 读取速度，GB/s
    12.9 left arrow 17.2
  • 写入速度，GB/s
    9.0 left arrow 14.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3414

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Crucial Technology BL8G32C16U4WL.8FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Kingston KHX2133C13S4/8G 8GB
Kingston KHX2133C13S4/8G 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston HP32D4U8S8HC-8X 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905711-002.A00G 4GB
Kingston 9905711-002.A00G 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK8GX4M2B4200C19 4GB
Corsair CMK8GX4M2B4200C19 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston KY7N41-MIE 8GB
Kingston KY7N41-MIE 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Kingston XRGM6C-MIE 16GB
Kingston XRGM6C-MIE 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avant Technology J642GU42J7240NF 16GB
Avant Technology J642GU42J7240NF 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK16GX4M2K4500C19 8GB
Corsair CMK16GX4M2K4500C19 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2D3600C18 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Maxsun MSD48G32Q3 8GB
Maxsun MSD48G32Q3 8GB
内存RAM