Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

需要考虑的原因
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 -12% 更低的延时
更快的读取速度，GB/s

18.7 12.9

测试中的平均数值
更快的写入速度，GB/s

15.4 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 25
读取速度，GB/s

12.9 18.7
写入速度，GB/s

9.0 15.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 3632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) 2400 C17 8GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMK16GX4M4C3000C16 4GB

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Samsung M471B5173DB0-YK0 4GB

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Corsair CMWX8GD3600C18W2D 8GB