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Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLS4G4D240FSB.8FBD 4GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Crucial Technology BLS4G4D240FSB.8FBD 4GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 13% 更低的延时
Crucial Technology BLS4G4D240FSB.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FBD 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 32
  • 读取速度，GB/s
    12.9 left arrow 16.1
  • 写入速度，GB/s
    9.0 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2711

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
G Skill Intl F4-3200C16-8GVKBN 8GB
G Skill Intl F4-3200C16-8GVKBN 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston KHX2133C14/8G 8GB
Kingston KHX2133C14/8G 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMR64GX4M4C3466C16 16GB
Corsair CMR64GX4M4C3466C16 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM