RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
比较
Kingston 9905403-156.A00LF 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
总分
Kingston 9905403-156.A00LF 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
18
45
左右 60% 更低的延时
更快的读取速度,GB/s
17.7
6.9
测试中的平均数值
更快的写入速度,GB/s
13.1
6.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
18
45
读取速度,GB/s
17.7
6.9
写入速度,GB/s
13.1
6.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2926
1499
Kingston 9905403-156.A00LF 2GB RAM的比较
Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C16-4GRS 4GB
Samsung M393B1G70BH0-CK0 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Kingston 9905469-143.A00LF 4GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
PNY Electronics PNY 2GB
Kingston 9905678-026.A00G 8GB
Samsung M471B5773DH0-CH9 2GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Samsung M391B5673EH1-CH9 2GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
Kingston 9965525-140.A00LF 8GB
Smart Modular SF4722G4CKHH6DFSDS 16GB
Kingston 99U5474-013.A00LF 2GB
Kingston 9905625-066.A00G 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Kingston ACR256X64D3S1333C9 2GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
报告一个错误
×
Bug description
Source link