Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLS4G4D240FSB.8FBD2 4GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Crucial Technology BLS4G4D240FSB.8FBD2 4GB

Crucial Technology BLS4G4D240FSB.8FBD2 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Crucial Technology BLS4G4D240FSB.8FBD2 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FBD2 4GB

报告一个错误

更快的读取速度，GB/s

16.5 12.9

测试中的平均数值
更快的写入速度，GB/s

12.2 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS4G4D240FSB.8FBD2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

12.9 16.5
写入速度，GB/s

9.0 12.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 2774

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B1G73DB0-YK0 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingston 9965657-011.A00G 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Kllisre DDR4-8GB 8GB

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