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Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT8G4SFD824A.C16FE 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology CT8G4SFD824A.C16FE 8GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
Crucial Technology CT8G4SFD824A.C16FE 8GB 需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 24
  • 读取速度，GB/s
    12.9 left arrow 16.2
  • 写入速度，GB/s
    9.0 left arrow 13.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2839

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Crucial Technology CT8G4SFD824A.C16FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMR64GX4M4K3600C18 16GB
Corsair CMR64GX4M4K3600C18 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMD16GX4M2A2666C15 8GB
Corsair CMD16GX4M2A2666C15 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CM4X8GE2400C16K4 8GB
Corsair CM4X8GE2400C16K4 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.CAGP7.C7C0B 8GB
Apacer Technology 78.CAGP7.C7C0B 8GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Mushkin 99[2/7/4]204[F/T] 4GB
Mushkin 99[2/7/4]204[F/T] 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3400C16-8GTZKW 8GB
G Skill Intl F4-3400C16-8GTZKW 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMK128GX4M4D3600C18 32GB
Corsair CMK128GX4M4D3600C18 32GB
内存RAM