PNY Electronics PNY 2GB vs Corsair CMD16GX4M2A2666C15 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMD16GX4M2A2666C15 8GB

Corsair CMD16GX4M2A2666C15 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Corsair CMD16GX4M2A2666C15 8GB

需要考虑的原因
Corsair CMD16GX4M2A2666C15 8GB

报告一个错误

更快的读取速度，GB/s

17.1 13.8

测试中的平均数值
更快的写入速度，GB/s

13.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMD16GX4M2A2666C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

13.8 17.1
写入速度，GB/s

8.4 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3350

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M2A2666C15 8GB

Corsair CMD16GX4M2A2666C15 8GB

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G Skill Intl F4-5066C20-8GVK 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Kingston KHX1600C9D3/4G 4GB

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Kingston 9905624-007.A00G 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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Cortus SAS 8ATF1G64AZ-2G6E1 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMT32GX4M2C3200C14 16GB

Corsair CMT32GX4M2C3200C14 16GB