Micron Technology 16JTF51264HZ-1G6M1 4GB vs Essencore Limited KD48GU880-32A160T 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Essencore Limited KD48GU880-32A160T 8GB

需要考虑的原因
Essencore Limited KD48GU880-32A160T 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 -8% 更低的延时
更快的读取速度，GB/s

21 12.9

测试中的平均数值
更快的写入速度，GB/s

15.6 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Essencore Limited KD48GU880-32A160T 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 26
读取速度，GB/s

12.9 21.0
写入速度，GB/s

9.0 15.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 3655

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Essencore Limited KD48GS88A-26N1600 8GB

Essencore Limited KD48GS88A-26N1600 8GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16G

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology CT25664BA1339.D8FE 2GB

Crucial Technology CT25664BA1339.D8FE 2GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1