Micron Technology 16JTF51264HZ-1G6M1 4GB vs G Skill Intl F4-2400C15-4GNT 4GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

G Skill Intl F4-2400C15-4GNT 4GB

需要考虑的原因
G Skill Intl F4-2400C15-4GNT 4GB

报告一个错误

更快的读取速度，GB/s

15.1 12.9

测试中的平均数值
更快的写入速度，GB/s

11.2 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-2400C15-4GNT 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

12.9 15.1
写入速度，GB/s

9.0 11.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Samsung M471B5273DH0-CH9 4GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMW16GX4M2K4000C19 8GB

Corsair CMW16GX4M2K4000C19 8GB

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Patriot Memory (PDP Systems) PSD48G24002 8GB

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A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3333C16-8GVR 8GB

G Skill Intl F4-3333C16-8GVR 8GB