RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471B5273DH0-CH9 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB

Samsung M471B5273DH0-CH9 4GB vs Micron Technology 36ASF2G72PZ-2G6E1 16GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 49
    左右 4% 更低的延时
Micron Technology 36ASF2G72PZ-2G6E1 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G6E1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    9.8 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 49
  • 读取速度，GB/s
    9.3 left arrow 9.8
  • 写入速度，GB/s
    5.9 left arrow 8.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 2277

Samsung M471B5273DH0-CH9 4GB RAM的比较

Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
内存RAM
Corsair CMK64GX4M2D3600C18 32GB
Corsair CMK64GX4M2D3600C18 32GB
Corsair CMK64GX4M2D3000C16 32GB
Corsair CMK64GX4M2D3000C16 32GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMR16GX4M2C3466C16 8GB
Corsair CMR16GX4M2C3466C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMK32GX4M4E4133C19 8GB
Corsair CMK32GX4M4E4133C19 8GB
内存RAM
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMR64GX4M4K3600C18 16GB
Corsair CMR64GX4M4K3600C18 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905701-004.A00G 16GB
Kingston 9905701-004.A00G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C17-4GVK 4GB
G Skill Intl F4-3600C17-4GVK 4GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
G Skill Intl F4-2133C15-4GFX 4GB
G Skill Intl F4-2133C15-4GFX 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix HMA82GR7AFR4N-VK 16GB
SK Hynix HMA82GR7AFR4N-VK 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CM4X4GF2400C16K4 4GB
Corsair CM4X4GF2400C16K4 4GB
内存RAM