Micron Technology 16JTF51264HZ-1G6M1 4GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

报告一个错误

更快的读取速度，GB/s

16.8 12.9

测试中的平均数值
更快的写入速度，GB/s

13.8 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

12.9 16.8
写入速度，GB/s

9.0 13.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 3258

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Apacer Technology 78.CAGR4.DFC0B 8GB

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Kingston 9905665-017.A00G 4GB

Kingston 9905665-017.A00G 4GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

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Patriot Memory (PDP Systems) PSD48G266681 8GB

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InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB