Micron Technology 16JTF51264HZ-1G6M1 4GB vs Good Wealth Technology Ltd. 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

Good Wealth Technology Ltd. 8GB

需要考虑的原因
Good Wealth Technology Ltd. 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 28

左右 -33% 更低的延时
更快的读取速度，GB/s

18.1 12.9

测试中的平均数值
更快的写入速度，GB/s

12.0 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Good Wealth Technology Ltd. 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 21
读取速度，GB/s

12.9 18.1
写入速度，GB/s

9.0 12.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2112 3211

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965662-016.A00G 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CM4X4GF2666C16K4 4GB

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AMD R538G1601U2S-UO 8GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F4-3000C16-8GISB 8GB

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Samsung M378B5773DH0-CH9 2GB

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InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

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DSL Memory D4SS1G082SH21A-B 16GB