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Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    12.9 left arrow 9.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.6
    测试中的平均数值
Micron Technology 18ASF1G72AZ-2G1B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1B1 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 33
  • 读取速度，GB/s
    12.9 left arrow 9.6
  • 写入速度，GB/s
    9.0 left arrow 8.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2286

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Micron Technology 16JTF51264HZ-1G6M1 4GB
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