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Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD48G213381 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Patriot Memory (PDP Systems) PSD48G213381 8GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD48G213381 8GB

Patriot Memory (PDP Systems) PSD48G213381 8GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 13% 更低的延时
Patriot Memory (PDP Systems) PSD48G213381 8GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD48G213381 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.8 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 32
  • 读取速度，GB/s
    12.9 left arrow 14.8
  • 写入速度，GB/s
    9.0 left arrow 10.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2740

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Patriot Memory (PDP Systems) PSD48G213381 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston 9965669-031.A00G 16GB
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SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
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Crucial Technology BL8G32C16S4B.M8FE 8GB
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G Skill Intl F4-2400C17-8GNT 8GB
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Smart Modular SH564128FH8NZQNSCG 4GB
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Crucial Technology BLT2G3D1608DT1TX0 2GB
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Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
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A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Kingston K6VDX7-HYD 8GB
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Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
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Crucial Technology CT8G4SFRA266.C4FE 8GB
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Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
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内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMK16GX4M4A2666C16 4GB
Corsair CMK16GX4M4A2666C16 4GB
内存RAM
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内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
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G Skill Intl F4-4400C19-16GTZR 16GB
内存RAM
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内存RAM
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PNY Electronics PNY 2GB
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内存RAM