Crucial Technology CT51264AC800.C16FC 4GB
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB

Crucial Technology CT51264AC800.C16FC 4GB vs Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB

总分
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Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB

Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB

差异

  • 更快的写入速度,GB/s
    2,378.6 left arrow 2,312.6
    测试中的平均数值
  • 低于PassMark测试中的延时,ns
    57 left arrow 62
    左右 -9% 更低的延时
  • 更快的读取速度,GB/s
    4 left arrow 4
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时,ns
    62 left arrow 57
  • 读取速度,GB/s
    4,670.6 left arrow 4,671.5
  • 写入速度,GB/s
    2,378.6 left arrow 2,312.6
  • 内存带宽,mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    861 left arrow 879
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较