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DDR2
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Crucial Technology CT51264AC800.C16FC 4GB
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Comparez
Crucial Technology CT51264AC800.C16FC 4GB vs Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Note globale
Crucial Technology CT51264AC800.C16FC 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Crucial Technology CT51264AC800.C16FC 4GB
Signaler un bogue
Vitesse d'écriture plus rapide, GB/s
2,378.6
2,312.6
Valeur moyenne dans les tests
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
57
62
Autour de -9% latence réduite
Vitesse de lecture plus rapide, GB/s
4
4
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
Crucial Technology CT51264AC800.C16FC 4GB
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Principales caractéristiques
Type de mémoire
DDR2
DDR2
Latence dans PassMark, ns
62
57
Vitesse de lecture, GB/s
4,670.6
4,671.5
Vitesse d'écriture, GB/s
2,378.6
2,312.6
Largeur de bande de la mémoire, mbps
6400
6400
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Vitesse d'horloge
5-5-5-15 / 800 MHz
5-5-5-15 / 800 MHz
Classement PassMark (Plus il y en a, mieux c'est)
861
879
Crucial Technology CT51264AC800.C16FC 4GB Comparaison des RAM
Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB Comparaison des RAM
Kingston ACR32D4U2S1ME-8 8GB
G Skill Intl F4-3200C14-32GTRG 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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Bug description
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