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Micron Technology 16JTF51264HZ-1G6M1 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Ramaxel Technology RMT3160ED58E9W1600 4GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 40
    左右 30% 更低的延时
  • 更快的读取速度，GB/s
    12.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 7.8
    测试中的平均数值
Ramaxel Technology RMT3160ED58E9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB
报告一个错误

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 40
  • 读取速度，GB/s
    12.9 left arrow 12.3
  • 写入速度，GB/s
    9.0 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 1806

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB RAM的比较

AMD R538G1601S2LS 8GB
Kingston 9905678-023.A00G 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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