Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M378A2G43MX3-CTD 16GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Samsung M378A2G43MX3-CTD 16GB

Samsung M378A2G43MX3-CTD 16GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

Samsung M378A2G43MX3-CTD 16GB

需要考虑的原因
Samsung M378A2G43MX3-CTD 16GB

报告一个错误

更快的读取速度，GB/s

15.1 12.9

测试中的平均数值
更快的写入速度，GB/s

11.9 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M378A2G43MX3-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

12.9 15.1
写入速度，GB/s

9.0 11.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 3224

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Kingston 9905622-057.A00G 4GB

Kingston 9905622-057.A00G 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Super Talent F24SB8GH 8GB

Super Talent F24SB8GH 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston KHX2133C13D4/4GX 4GB

Kingston KHX2133C13D4/4GX 4GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Corsair CM4X8GF2400C16K4 8GB

Corsair CM4X8GF2400C16K4 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M378A2G43MX3-CTD 16GB

Samsung M378A2G43MX3-CTD 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-4000C18-32GTZR 32GB

G Skill Intl F4-4000C18-32GTZR 32GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Essencore Limited KD4AGU880-32A160X 16GB

Essencore Limited KD4AGU880-32A160X 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB