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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M378A5244BB0-CRC 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M378A5244BB0-CRC 4GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
Samsung M378A5244BB0-CRC 4GB 需要考虑的原因
Samsung M378A5244BB0-CRC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M378A5244BB0-CRC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 28
  • 读取速度，GB/s
    12.9 left arrow 16.0
  • 写入速度，GB/s
    9.0 left arrow 11.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2436

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Samsung M378A5244BB0-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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SK Hynix HMT451S6BFR8A-PB 4GB
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内存RAM