SK Hynix HMT425S6CFR6A-PB 2GB vs G Skill Intl F4-3200C16-8GTZN 8GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分

G Skill Intl F4-3200C16-8GTZN 8GB

G Skill Intl F4-3200C16-8GTZN 8GB

差异规格评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

G Skill Intl F4-3200C16-8GTZN 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZN 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

19.7 10.1

测试中的平均数值
更快的写入速度，GB/s

15.6 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-3200C16-8GTZN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

10.1 19.7
写入速度，GB/s

7.1 15.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1484 3717

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Avant Technology W641GU42J9266NC 8GB

Avant Technology W641GU42J9266NC 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMD16GX3M4A2666C11 4GB

Corsair CMD16GX3M4A2666C11 4GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2666C13/16GX 16GB

Kingston KHX2666C13/16GX 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

G Skill Intl F4-4000C17-8GVKB 8GB

G Skill Intl F4-4000C17-8GVKB 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Corsair CMT16GX4M2Z3200C16 8GB

Corsair CMT16GX4M2Z3200C16 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-2666C15-8GVK 8GB

G Skill Intl F4-2666C15-8GVK 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB