Kingston KVR533D2N4 512MB vs Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 75

左右 -127% 更低的延时
更快的读取速度，GB/s

17.8 1

测试中的平均数值
更快的写入速度，GB/s

12.5 1,672.1

测试中的平均数值
更高的内存带宽，mbps

25600 4200

左右 6.1 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Lexar Co Limited LD4AU016G-H3200GST 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 33
读取速度，GB/s

1,943.5 17.8
写入速度，GB/s

1,672.1 12.5
内存带宽，mbps

4200 25600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

301 3285

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DQVE1908 512MB

Corsair CMR32GX4M2F3600C18 16GB

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SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

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Kingston 99U5474-028.A00LF 4GB

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Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

Samsung M393B1K70QB0-CK0 8GB

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EXCELERAM D4168G8HHSS9CJRB21 16GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-4133C19-8GTZR 8GB

G Skill Intl F4-4133C19-8GTZR 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB