Kingston 99U5474-028.A00LF 4GB vs Kingston ACR32D4U2S1ME-8 8GB

总分

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

总分

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

差异规格评论

差异

Kingston 99U5474-028.A00LF 4GB

需要考虑的原因
Kingston 99U5474-028.A00LF 4GB

报告一个错误

Kingston ACR32D4U2S1ME-8 8GB

需要考虑的原因
Kingston ACR32D4U2S1ME-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 39

左右 -8% 更低的延时
更快的读取速度，GB/s

17.4 12.6

测试中的平均数值
更快的写入速度，GB/s

11.5 6.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-028.A00LF 4GB

Kingston ACR32D4U2S1ME-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 36
读取速度，GB/s

12.6 17.4
写入速度，GB/s

6.8 11.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1954 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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SK Hynix HMA41GR7MFR8N-TFT1 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Crucial Technology CT16G4SFD824A.M16FD1 16GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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AMD R538G1601U2S 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix HMA42GR7AFR4N-UH 16GB

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Samsung M393B1K70CH0-YH9 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

V-Color Technology Inc. TN416G24D817-VHA/R 16GB

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