Micron Technology 16JTF51264HZ-1G6M1 4GB vs SK Hynix HMA81GU6CJR8N-XN 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

SK Hynix HMA81GU6CJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GU6CJR8N-XN 8GB

报告一个错误

更快的读取速度，GB/s

16.4 12.9

测试中的平均数值
更快的写入速度，GB/s

12.6 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix HMA81GU6CJR8N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

12.9 16.4
写入速度，GB/s

9.0 12.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2112 3046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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SK Hynix HMA81GU6CJR8N-XN 8GB

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Neo Forza NMUD480E82-3600 8GB

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Kingston 9905471-002.A00LF 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Corsair CMK32GX4M2Z2400C16 16GB

Corsair CMK32GX4M2Z2400C16 16GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

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Ramaxel Technology RMSA3320KE78HAF-3200 8GB

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Kingston 9905471-006.A01LF 4GB

Corsair CMT32GX4M2K4000C19 16GB

Corsair CMT32GX4M2K4000C19 16GB