Micron Technology 16JTF51264HZ-1G6M1 4GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 40% 更低的延时

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

报告一个错误

更快的读取速度，GB/s

14.8 12.9

测试中的平均数值
更快的写入速度，GB/s

11.6 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 47
读取速度，GB/s

12.9 14.8
写入速度，GB/s

9.0 11.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 2875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C16-8GVS 8GB

G Skill Intl F4-3200C16-8GVS 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9905713-028.A00G 8GB

Kingston 9905713-028.A00G 8GB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 9965669-017.A00G 16GB

Kingston 9965669-017.A00G 16GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Golden Empire CL14-14-14 D4-2400 16GB

Golden Empire CL14-14-14 D4-2400 16GB

G Skill Intl F3-2400C10-8GTX 8GB

G Skill Intl F3-2400C10-8GTX 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB