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Micron Technology 16KTF1G64HZ-1G9E2 8GB
Corsair CMD32GX4M4E4000C19 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Corsair CMD32GX4M4E4000C19 8GB

总分
star star star star star
Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

总分
star star star star star
Corsair CMD32GX4M4E4000C19 8GB

Corsair CMD32GX4M4E4000C19 8GB

差异 规格 评论

差异

Micron Technology 16KTF1G64HZ-1G9E2 8GB 需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9E2 8GB
报告一个错误
Corsair CMD32GX4M4E4000C19 8GB 需要考虑的原因
Corsair CMD32GX4M4E4000C19 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 25
    左右 -4% 更低的延时
  • 更快的写入速度，GB/s
    13.7 left arrow 11.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Corsair CMD32GX4M4E4000C19 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 24
  • 读取速度，GB/s
    15.4 left arrow 15.4
  • 写入速度，GB/s
    11.3 left arrow 13.7
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2696 left arrow 3156

Micron Technology 16KTF1G64HZ-1G9E2 8GB RAM的比较

SK Hynix HMT41GS6BFR8A-RD 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB

Corsair CMD32GX4M4E4000C19 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965525-144.A00LF 8GB
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内存RAM
Samsung M471B5273DH0-CH9 4GB
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内存RAM
Kingston 9905471-006.A01LF 4GB
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内存RAM
Kingston KHX1600C9S3L/4G 4GB
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内存RAM
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内存RAM
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Corsair CMD32GX4M4E4000C19 8GB
Corsair CMD32GX4M4E4000C19 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
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Corsair CMV8GX4M1A2400C16 8GB
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内存RAM
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Samsung M386B4G70DM0-CMA4 32GB
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G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-3200C14-16GFX 16GB
内存RAM
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内存RAM
Peak Electronics 256X64M-67E 2GB
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G Skill Intl F4-2400C15-8GRR 8GB
内存RAM
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内存RAM
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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