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Micron Technology 16KTF1G64HZ-1G9E2 8GB
Kingston KHX2666C13D4/8GX 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Kingston KHX2666C13D4/8GX 8GB

总分
star star star star star
Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

总分
star star star star star
Kingston KHX2666C13D4/8GX 8GB

Kingston KHX2666C13D4/8GX 8GB

差异 规格 评论

差异

Micron Technology 16KTF1G64HZ-1G9E2 8GB 需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9E2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 31
    左右 19% 更低的延时
Kingston KHX2666C13D4/8GX 8GB 需要考虑的原因
Kingston KHX2666C13D4/8GX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 11.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Kingston KHX2666C13D4/8GX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 31
  • 读取速度，GB/s
    15.4 left arrow 17.6
  • 写入速度，GB/s
    11.3 left arrow 13.2
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2696 left arrow 3158

Micron Technology 16KTF1G64HZ-1G9E2 8GB RAM的比较

SK Hynix HMT41GS6BFR8A-RD 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB

Kingston KHX2666C13D4/8GX 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378B5773DH0-CH9 2GB
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G Skill Intl F4-2400C16-8GFXR 8GB
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Samsung M3 78T2863EHS-CF7 1GB
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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
SK Hynix HMT42GR7AFR4C-RD 16GB
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内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
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Crucial Technology CT8G4DFD8213.C16FHP 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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