Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Micron Technology 16KTF1G64HZ-1G9P1 8GB

总分

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

总分

Micron Technology 16KTF1G64HZ-1G9P1 8GB

Micron Technology 16KTF1G64HZ-1G9P1 8GB

差异规格评论

差异

Micron Technology 16KTF1G64HZ-1G9E2 8GB

需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9E2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 43

左右 42% 更低的延时
更快的读取速度，GB/s

15.4 13.2

测试中的平均数值
更快的写入速度，GB/s

11.3 9.2

测试中的平均数值

Micron Technology 16KTF1G64HZ-1G9P1 8GB

需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9P1 8GB

报告一个错误

规格

完整的技术规格清单

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9P1 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

25 43
读取速度，GB/s

15.4 13.2
写入速度，GB/s

11.3 9.2
内存带宽，mbps

14900 14900

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13
时序/时钟速度

9-10-9-28 / 1866 MHz 9-10-9-28 / 1866 MHz
排名PassMark (越多越好)

2696 2285

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9P1 8GB

Micron Technology 16KTF1G64HZ-1G9P1 8GB

AMD AE34G1601U1 4GB

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Good Wealth Technology Ltd. KETECH 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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G Skill Intl F4-3600C18-16GTZR 16GB

G Skill Intl F4-3600C18-16GTZR 16GB

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G Skill Intl F3-2133C9-8GBZH 8GB