Micron Technology 16KTF1G64HZ-1G9E2 8GB vs SK Hynix HMA41GR7MFR4N-TFTD 8GB

总分

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

总分

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

差异规格评论

差异

Micron Technology 16KTF1G64HZ-1G9E2 8GB

需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9E2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时
更快的读取速度，GB/s

15.4 9.1

测试中的平均数值
更快的写入速度，GB/s

11.3 7.5

测试中的平均数值

SK Hynix HMA41GR7MFR4N-TFTD 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR4N-TFTD 8GB

报告一个错误

更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Micron Technology 16KTF1G64HZ-1G9E2 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

15.4 9.1
写入速度，GB/s

11.3 7.5
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2696 1927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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