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Micron Technology 16KTF1G64HZ-1G9E2 8GB
V-Color Technology Inc. TA48G36S818BN 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB vs V-Color Technology Inc. TA48G36S818BN 8GB

总分
star star star star star
Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

总分
star star star star star
V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

差异 规格 评论

差异

Micron Technology 16KTF1G64HZ-1G9E2 8GB 需要考虑的原因
Micron Technology 16KTF1G64HZ-1G9E2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 57
    左右 56% 更低的延时
  • 更快的写入速度，GB/s
    11.3 left arrow 9.8
    测试中的平均数值
V-Color Technology Inc. TA48G36S818BN 8GB 需要考虑的原因
V-Color Technology Inc. TA48G36S818BN 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.1 left arrow 15.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14900
    左右 1.43 更高的带宽

规格

完整的技术规格清单
Micron Technology 16KTF1G64HZ-1G9E2 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 57
  • 读取速度，GB/s
    15.4 left arrow 20.1
  • 写入速度，GB/s
    11.3 left arrow 9.8
  • 内存带宽，mbps
    14900 left arrow 21300
Other
  • 描述
    PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2696 left arrow 2328

Micron Technology 16KTF1G64HZ-1G9E2 8GB RAM的比较

SK Hynix HMT41GS6BFR8A-RD 8GB
Samsung 18ASF1G72PDZ-2G1B1 16GB

V-Color Technology Inc. TA48G36S818BN 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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