Micron Technology 18HTF12872AY-800F1 1GB vs Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 14.4

测试中的平均数值

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

需要考虑的原因
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 58

左右 -152% 更低的延时
更快的写入速度，GB/s

7.3 2,107.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 23
读取速度，GB/s

4,025.3 14.4
写入速度，GB/s

2,107.0 7.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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