Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMK32GX4M4D3200C16 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Corsair CMK32GX4M4D3200C16 8GB

Corsair CMK32GX4M4D3200C16 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Corsair CMK32GX4M4D3200C16 8GB

需要考虑的原因
Corsair CMK32GX4M4D3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 -40% 更低的延时
更快的读取速度，GB/s

15.7 13.7

测试中的平均数值
更快的写入速度，GB/s

12.1 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK32GX4M4D3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 25
读取速度，GB/s

13.7 15.7
写入速度，GB/s

9.6 12.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 3139

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1K43DB1-CTD 8GB

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G Skill Intl F4-2666C19-8GVK 8GB

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PNY Electronics PNY 2GB

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Kingston KHX3200C20S4/8G 8GB

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SK Hynix HYMP125U64CP8-S6 2GB

Corsair CMK32GX4M2D3600C16 16GB

Corsair CMK32GX4M2D3600C16 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB