Micron Technology 18HTF12872AY-800F1 1GB vs Corsair CMK16GX4M2K4333C19 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Corsair CMK16GX4M2K4333C19 8GB

Corsair CMK16GX4M2K4333C19 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 20.1

测试中的平均数值
更快的写入速度，GB/s

2,107.0 19.5

测试中的平均数值

Corsair CMK16GX4M2K4333C19 8GB

需要考虑的原因
Corsair CMK16GX4M2K4333C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 58

左右 -222% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMK16GX4M2K4333C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 18
读取速度，GB/s

4,025.3 20.1
写入速度，GB/s

2,107.0 19.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 3704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFD8213.M16FB 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Essencore Limited KD44GU480-26N160T 4GB

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G Skill Intl F4-2800C15-4GVRB 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston 9905598-039.A00G 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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PNY Electronics PNY 2GB

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Kingston K6VDX7-HYD 8GB

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Kingston 99U5474-028.A00LF 4GB

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G Skill Intl F4-3466C16-8GTZR 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Super Talent F24SB8GH 8GB

Super Talent F24SB8GH 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB