Micron Technology 18HTF12872AY-800F1 1GB vs Corsair CMSX32GX4M2A2933C19 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Corsair CMSX32GX4M2A2933C19 16GB

Corsair CMSX32GX4M2A2933C19 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 17.2

测试中的平均数值
更快的写入速度，GB/s

2,107.0 15.1

测试中的平均数值

Corsair CMSX32GX4M2A2933C19 16GB

需要考虑的原因
Corsair CMSX32GX4M2A2933C19 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 58

左右 -93% 更低的延时
更高的内存带宽，mbps

23400 6400

左右 3.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMSX32GX4M2A2933C19 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 30
读取速度，GB/s

4,025.3 17.2
写入速度，GB/s

2,107.0 15.1
内存带宽，mbps

6400 23400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

670 3428

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Patriot Memory (PDP Systems) 2400 C15 Series 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMSX32GX4M2A2933C19 16GB

Corsair CMSX32GX4M2A2933C19 16GB

Samsung M4 70T5663CZ3-CE6 2GB

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Team Group Inc. Team-Elite-2133 4GB

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Kingston KVR533D2N4 512MB

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SK Hynix V-GeN D4H8GL26A8TX5 8GB

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Kingston 99U5428-018.A00LF 8GB

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Corsair CMT32GX4M2E3200C16 16GB

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Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

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Kingston HP536727-H41-ELD 4GB

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Crucial Technology CT16G4SFD8266.C16FD1 16GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB