Micron Technology 18HTF12872AY-800F1 1GB vs Crucial Technology CT16G4DFD8213.C16FBR 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Crucial Technology CT16G4DFD8213.C16FBR 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 58

左右 -53% 更低的延时
更快的写入速度，GB/s

9.4 2,107.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 38
读取速度，GB/s

4,025.3 13.7
写入速度，GB/s

2,107.0 9.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2471

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905625-066.A00G 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M378A2K43CB1-CTD 16GB

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AMD R5S38G1601U2S 8GB

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Kingston 99P5723-006.A00G 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

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Kingston ACR26D4S9D8MD-16 16GB

Kingston ACR26D4S9D8MD-16 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

Corsair CMD32GX4M4C3466C16W 8GB

Corsair CMD32GX4M4C3466C16W 8GB