Micron Technology 18HTF12872AY-800F1 1GB vs Crucial Technology CT8G4DFS8213.M8FB 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Crucial Technology CT8G4DFS8213.M8FB 8GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 15.2

测试中的平均数值
更快的写入速度，GB/s

2,107.0 10.1

测试中的平均数值

Crucial Technology CT8G4DFS8213.M8FB 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.M8FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 58

左右 -87% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 31
读取速度，GB/s

4,025.3 15.2
写入速度，GB/s

2,107.0 10.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2712

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMN32GX4M2Z3600C16 16GB

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Samsung M323R2GA3BB0-CQKOD 16GB

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G Skill Intl F4-3600C14-16GTZR 16GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Apacer Technology 78.C2GFP.C700B 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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Kingston HP26D4U9S1ME-4 4GB

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Kingston KHX3200C18D4/8G 8GB

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Crucial Technology CT16G4DFD832A.C16FJ 16GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

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Kingston HX316C10F/8 8GB

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A-DATA Technology AM2P24HC8T1-BUSS 8GB