Micron Technology 18HTF12872AY-800F1 1GB vs DSL Memory D4SS1G082SH21A-B 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

DSL Memory D4SS1G082SH21A-B 16GB

DSL Memory D4SS1G082SH21A-B 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 13.4

测试中的平均数值

DSL Memory D4SS1G082SH21A-B 16GB

需要考虑的原因
DSL Memory D4SS1G082SH21A-B 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 58

左右 -93% 更低的延时
更快的写入速度，GB/s

6.9 2,107.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

DSL Memory D4SS1G082SH21A-B 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 30
读取速度，GB/s

4,025.3 13.4
写入速度，GB/s

2,107.0 6.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2081

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C15-8GTZR 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Samsung M471A1G43DB0-0-B 8GB

Samsung M471A1G43DB0-0-B 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F4-3000C16-8GTZN 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Transcend Information TS512MSH64V1H 4GB

Transcend Information TS512MSH64V1H 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston 99U5702-095.A00G 8GB

Kingston 99U5702-095.A00G 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingston LV32D4U2S8HD-8X 8GB

Kingston LV32D4U2S8HD-8X 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Patriot Memory (PDP Systems) PSD32G16002 2GB

Patriot Memory (PDP Systems) PSD32G16002 2GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

AMD R744G2133U1S 4GB

AMD R744G2133U1S 4GB