Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-3000C15-16GVR 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-3000C15-16GVR 16GB

G Skill Intl F4-3000C15-16GVR 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值
更快的写入速度，GB/s

2,107.0 14.2

测试中的平均数值

G Skill Intl F4-3000C15-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3000C15-16GVR 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 58

左右 -93% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3000C15-16GVR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 30
读取速度，GB/s

4,025.3 17.5
写入速度，GB/s

2,107.0 14.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 3520

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT425S6CFR6A-PB 2GB

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Kingston KHX3000C15/16GX 16GB

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Samsung M471B5674QH0-YK0 2GB

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Crucial Technology CT4G4DFS8213.C8FBR2 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingmax Semiconductor GLNH23F-18---------- 16GB

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Kingston 99U5469-045.A00LF 4GB

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Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

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Samsung M471A2K43CB1-CRCR 16GB

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G Skill Intl F4-4000C15-8GTZR 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

A-DATA Technology VDQVE1B16 2GB

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Chun Well Technology Holding Limited D4U0826190B 8GB

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Kingston 9905471-002.A00LF 2GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

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Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CM4X16GD3200C16K2E 16GB

Corsair CM4X16GD3200C16K2E 16GB