Micron Technology 18HTF12872AY-800F1 1GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Micron Technology 18HTF12872AY-800F1 1GB vs Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 16.5

测试中的平均数值
更快的写入速度，GB/s

2,107.0 12.0

测试中的平均数值

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 58

左右 -115% 更低的延时
更高的内存带宽，mbps

23400 6400

左右 3.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 27
读取速度，GB/s

4,025.3 16.5
写入速度，GB/s

2,107.0 12.0
内存带宽，mbps

6400 23400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-23400, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

670 3245

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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Kingston 9905624-046.A00G 8GB