RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 18HTF12872AY-800F1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
比较
Micron Technology 18HTF12872AY-800F1 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
总分
Micron Technology 18HTF12872AY-800F1 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
更快的读取速度,GB/s
4
10
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
58
左右 -66% 更低的延时
更快的写入速度,GB/s
7.0
2,107.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
35
读取速度,GB/s
4,025.3
10.0
写入速度,GB/s
2,107.0
7.0
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
670
2068
Micron Technology 18HTF12872AY-800F1 1GB RAM的比较
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB RAM的比较
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
SK Hynix HMT451U6BFR8A-PB 4GB
Samsung M378A5244CB0-CRC 4GB
Kingston 9965525-155.A00LF 8GB
Corsair CMWX8GD3000C15W4 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMH16GX4M2Z3600C18 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMD32GX4M4C3200C16-R 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A1K43DB1-CWE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C17-8GTRG 8GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Memphis Electronic D4SO1G724GI-A58SD 8GB
报告一个错误
×
Bug description
Source link