Micron Technology 18HTF12872AY-800F1 1GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 12.7

测试中的平均数值
更快的写入速度，GB/s

2,107.0 10.2

测试中的平均数值

Micron Technology 16ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 58

左右 -38% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 42
读取速度，GB/s

4,025.3 12.7
写入速度，GB/s

2,107.0 10.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6CFR8C-H9 2GB

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Golden Empire CL15-17-17 D4-3200 8GB

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Samsung M378A1K43BB2-CRC 8GB

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G Skill Intl F4-3200C16-16GTZN 16GB

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Kingston X5H5PW-MIB 8GB

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SK Hynix HMT42GR7AFR4C-RD 16GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMT32GX4M4Z3200C16 8GB

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AMD R538G1601U2S 8GB

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