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Micron Technology 18HTF12872AY-800F1 1GB
Samsung M393A2K40CB1-CRC 16GB

Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M393A2K40CB1-CRC 16GB

总分
star star star star star
Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分
star star star star star
Samsung M393A2K40CB1-CRC 16GB

Samsung M393A2K40CB1-CRC 16GB

差异 规格 评论

差异

Micron Technology 18HTF12872AY-800F1 1GB 需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 10.7
    测试中的平均数值
Samsung M393A2K40CB1-CRC 16GB 需要考虑的原因
Samsung M393A2K40CB1-CRC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 58
    左右 -29% 更低的延时
  • 更快的写入速度，GB/s
    6.5 left arrow 2,107.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M393A2K40CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 45
  • 读取速度，GB/s
    4,025.3 left arrow 10.7
  • 写入速度，GB/s
    2,107.0 left arrow 6.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    670 left arrow 2142

Micron Technology 18HTF12872AY-800F1 1GB RAM的比较

Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

Samsung M393A2K40CB1-CRC 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
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Samsung M393A2K40CB1-CRC 16GB
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内存RAM
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内存RAM
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内存RAM
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