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Micron Technology 4ATF1G64HZ-3G2E2 8GB
Samsung M471A5244CB0-CWE 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB vs Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

差异 规格 评论

差异

Micron Technology 4ATF1G64HZ-3G2E2 8GB 需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E2 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 15.5
    测试中的平均数值
Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 49
    左右 -29% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 11.0
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Samsung M471A5244CB0-CWE 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 38
  • 读取速度，GB/s
    15.8 left arrow 15.5
  • 写入速度，GB/s
    11.0 left arrow 12.0
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2534 left arrow 2283

Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
内存RAM
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-3200C16-4GRB 4GB
G Skill Intl F4-3200C16-4GRB 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Corsair CMSX16GX4M2A2400C16 8GB
Corsair CMSX16GX4M2A2400C16 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Apacer Technology D12.2356WS.001 8GB
Apacer Technology D12.2356WS.001 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A2G40DBD-CP1???? 16GB
Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4000C18-8GTZRB 8GB
G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMD64GX4M8A2800C16 8GB
Corsair CMD64GX4M8A2800C16 8GB
内存RAM